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| SUD50N03-10 Siliconix N-Channel 30-V (D-S), 175_C MOSFET Product Summary VDS (V) 30 rDS(on) (W) 0.010 @ VGS = 10 V 0.019 @ VGS = 4.5 V ID (A) "15 "12 D TO-252 Drain Connected to Tab G D S G Top View Order Number: SUD50N03-10 S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TA = 25_C TA = 100_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 "15 "10 "100 15 83 4a -55 to 175 Unit V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70265. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253--Rev. E, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors Symbol RthJA RthJC Typical Maximum 30 1.8 Unit _C/W 1 SUD50N03-10 Siliconix Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID =15 A Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID =15 A, TJ = 125_C VGS = 4.5 V, ID = 15 A Forward Transconductance b gfs VDS = 15 V, ID = 15 A 20 50 0.010 0.018 0.019 S W 30 V 1.0 2.0 "100 1 50 nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr Timec td(off) tf VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W VDS = 15 V, VGS = 10 V, ID = 50 A VGS = 0 V, VDS = 25 V, F = 1 MHz 3200 800 150 55 10 9 16 8 33 20 30 20 60 40 ns 100 nC 6000 pF Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 100 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 55 100 1.5 100 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253--Rev. E, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 2 SUD50N03-10 Siliconix Typical Characteristics (25_C Unless Otherwise Noted) 200 160 I D - Drain Current (A) 6V 120 5V 80 40 2, 3 V 0 0 2 4 6 8 10 0 0 2 4 6 8 I D - Drain Current (A) Output Characteristics VGS = 10, 9, 8, 7 V 100 80 60 40 20 Transfer Characteristics TC = -55_C 25_C 125_C 4V VDS - Drain-to-Source Voltage (V) 80 VGS - Gate-to-Source Voltage (V) 0.030 0.025 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 0 Transconductance TC = -55_C On-Resistance vs. Drain Current g fs - Transconductance (S) 60 25_C 40 125_C 20 0 0 10 20 30 40 50 rDS(on) - On-Resistance ( W ) 0 20 40 60 80 100 ID - Drain Current (A) 5000 4000 C - Capacitance (pF) Ciss 3000 2000 Coss 1000 0 Crss ID - Drain Current (A) 10 VGS - Gate-to-Source Voltage (V) 8 6 4 2 0 VDS = 15 V ID = 50 A Capacitance Gate Charge 0 5 10 15 20 25 30 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253--Rev. E, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 3 SUD50N03-10 Siliconix Typical Characteristics (25_C Unless Otherwise Noted) 2.4 2.0 1.6 1.2 0.8 0.4 0 -50 -25 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 50 A I S - Source Current (A) Source-Drain Diode Forward Voltage rDS(on) - On-Resistance ( W ) (Normalized) TJ = 175_C TJ = 25_C 10 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Thermal Ratings 20 16 I D - Drain Current (A) 12 8 4 0 I D - Drain Current (A) Maximum Drain Current vs. Ambient Temperature 500 Safe Operating Area 100 Limited by rDS(on) 10, 100 ms 10 1 ms 10 ms 1 TA = 25_C Single Pulse 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 100 ms 1s dc 0 25 50 75 100 125 150 175 TA - Ambient Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 10 30 Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253--Rev. E, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 4 |
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